Oclaro 10g Modulator /F-10/10g

Oclaro intensity modulators are based on the Mach-Zehnder Interferometer architecture. They are manufactured using the highly reliable

1064nm Phase Modulator 10G

Our Phase Modulator can be built with advanced proton exchange (APE) or Ti-indiffusion technology, features low insertion loss, high modulation bandwidth and low half-wave voltage, it''s widely used in

R-AM-10-10G

The R-AM-10-10G from Beijing Rofea Optoelectronics is a Electro-Optic Intensity Modulator with Electro-Optical (EO) Bandwidth 10 to 12 GHz, RF Half-Wave (Vpi)

R-PM

The R-PM- 10- 10G from Beijing Rofea Optoelectronics is a Electro-Optic Phase Modulator with RF Half-Wave (Vpi) Voltage 3.5 to 4 V, RF Input Power 28 dBm, Electro-Optical (EO) Bandwidth 10 to 12

Silicon optical modulators

CMOS-compatible silicon optical modulators with high modulation speeds, large bandwidths, small footprints, low losses and ultralow power

1064nm Intensity Modulator 10G

1064nm Intensity Modulator (LiNbO3) is a kind of external optical modulater which is designed for loading modulation signals of various modulation formats onto the light. The effective refractive index

FS Community

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1550 nm, 10 GHz Intensity Modulator. PM, FC/APC

The Optilab IMP-1550-10-PM is a 10 GHz Intensity Modulator that is manufactured with Annealed Proton Exchange (APE) process, it features a zero-chirp design and Polarization Maintaining (PM) fiber output.

Rwanda completes $95 mln fibre optic network

Rwanda has completed construction of a 2,300 kilometre (1,380 miles) fibre optic telecommunications network across the country to link it to undersea cables running along the east

Rwanda

Landlocked Rwanda accesses cross-border undersea fibre-optic cables in Kenya and Tanzania for international bandwidth. The Rwanda Internet Exchange launched in 2004.

R-AM-15-10G Wavelength 1550nm 10GHz Intensity

The LiNbO3 electro-optic intensity modulator is based on MZ push-pull structure, having a low half-wave voltage and stable physical and chemical characteristics, and the device has a high response

2000nm Intensity Modulator 10G

Our MZM Intensity Modulator built with advanced proton exchange technology, features low insertion loss, high modulation bandwidth and low half-wave voltage, it''s widely used in Optical Quantum

R-AM-15-10G

The R-AM-15-10G from Beijing Rofea Optoelectronics is a Electro-Optic Intensity Modulator with Electro-Optical (EO) Bandwidth 10 to 12 GHz, RF Half-Wave (Vpi) Voltage 4.5 to 5 V, DC Half-Wave (Vpi)

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